2017

M. Pfender,  N. Aslam, P. Simon, D. Antonov, G. Thiering, S. Burk, F. Fávaro de Oliveira, A. Denisenko, H. Fedder, J. Meijer, J. A. Garrido, A. Gali, T. Teraji, J. Isoya, M. W. Doherty, A. Alkauskas, A. Gallo, A. Grüneis, P. Neumann, and J. Wrachtrup
Protecting a diamond quantum memory by charge state control
Nano Lett. 17, 5931 (2017)

 

T. B. Biktagirov,  A. N. Smirnov, V. Yu. Davydov, M. W. Doherty, A. Alkauskas, B. C. Gibson, and V. A. Soltamov
Strain broadening of the 1042-nm zero-phonon line of the NV center in diamond: a promising spectroscopic tool for defect tomography
Phys. Rev. B 96, 075205 (2017)

 

J. L. Lyons, A. Alkauskas, A. Janotti, and C. G. Van de Walle
Deep donor state of the copper acceptor as a source of green luminescence in ZnO
Appl. Phys. Lett. 111, 042101 (2017)

 

A. L. Exarhos, D. A. Hopper, R. R. Grote, A. Alkauskas, and L. C. Bassett
Optical signatures of quantum emitters in suspended hexagonal boron nitride
ACS Nano 11, 3328 (2017)

 

Y. K. Frodason, K. M. Johansen, T. S. Bjørheim, B. G. Svensson, and A. Alkauskas
The Zn vacancy as a polaronic hole trap in ZnO
Phys. Rev. B  95, 094105 (2017)

medium

 

J.-X. Shen, D. Wickramaratne, C. E. Dreyer, A. Alkauskas, E. Young, J. S. Speck, and C. G. Van de Walle
Calcium as a nonradiative recombination center in InGaN
Appl. Phys. Express 10, 021001 (2017)

2016

Z. Shotan, H. Jayakumar, C. R. Considine, M. Mackoit, H. Fedder, J. Wrachtrup, A. Alkauskas, M. W. Doherty, V. M. Menon, and C. A. Meriles
Photo-induced modification of single-photon emitters in hexagonal boron nitride
ACS Photonics 3, 2490 (2016)

0l

 

M. W. Doherty, C. A. Meriles, A. Alkauskas, H. Fedder, M. J. Sellars, and N. B. Manson
Towards a room-temperature spin quantum bus in diamond via optical spin injection, transport and detection
Phys. Rev. X 6, 041035 (2016)

physrevx-6-041035

 

D. Wickramaratne, J.-X. Shen, C. E. Dreyer, M. Engel, M. Marsman, G. Kresse, S. Marcinkevičius, A. Alkauskas, and C. G. Van de Walle
Iron as a source of efficient Shockley-Read-Hall recombination in GaN
Appl. Phys. Lett.  109, 162107 (2016)

126331_web
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A. Alkauskas, C. E. Dreyer, J. L. Lyons, and C. G. Van de Walle
Role of excited states in Shockley-Read-Hall recombination in wide-band-gap semiconductors
Phys. Rev. B 93, 201304 (2016)

 

A. Alkauskas, M. D. McCluskey and C. G. Van de Walle
Tutorial: Defects in semiconductors – combining experiment and theory
J. of Appl. Phys. 119, 181101 (2016)

 

C. E. Dreyer, A. Alkauskas, J. L. Lyons, J. S. Speck and C. G. Van de Walle
Gallium vacancy complexes as a cause of Shockley-Read-Hall recombination in III-nitride light emitters
Appl. Phys. Lett. 108, 141101 (2016)

audri
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2015

J. L. Lyons, A. Alkauskas, A. Janotti, and C. G. Van de Walle
First-principles theory of acceptors in nitride semiconductors
Phys. Stat. Solidi B 252, 900 (2015)

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